Direct measurement of the linear energy transfer of ions in silicon for space application
Autor: | Hong‐Wen Xiang, Hong Zou, Chen Hongfei, ZhanGuo Cui, JiQing Zou, Yu Xiangqian, WeiYing Zhong, ZhiHua Hao, SiPei Shao, Shi Weihong |
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Rok vydání: | 2015 |
Předmět: |
Physics
Spacecraft Physics::Instrumentation and Detectors 010308 nuclear & particles physics business.industry Detector General Engineering Linear energy transfer 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Bin law.invention Ion Telescope law 0103 physical sciences Calibration General Materials Science Atomic physics Particle radiation 0210 nano-technology business |
Zdroj: | Science China Technological Sciences. 59:128-134 |
ISSN: | 1869-1900 1674-7321 |
DOI: | 10.1007/s11431-015-5773-8 |
Popis: | The single event effect (SEE) is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures. The linear energy transfer (LET) of ions is commonly investigated in studies of SEE. The use of a thin detector is an economical way of directly measuring the LET in space. An LET telescope consists of a thin detector as the front detector (D1), along with a back detector that indicates whether D1 was penetrated. The particle radiation effect monitor (PREM) introduced in this paper is designed to categorize the LET into four bins of 0.2–0.4, 0.4–1.0, 1.0–2.0 and 2.0–20 MeV·cm2/mg, and one integral bin of LET>20 MeV·cm2/mg. After calibration with heavy ions and Geant4 analysis, the LET boundaries of the first four bins are determined to be 0.236, 0.479, 1.196, 2.254, and 17.551 MeV·cm2/mg, whereas that of the integral bin is determined to be LET>14.790 MeV·cm2/mg. The acceptances are calculated by Geant4 analysis as 0.452, 0.451, 0.476, 0.446, and 1.334, respectively. The LET accuracy is shown to depend on the thickness of D1; as D1 is made thinner, the accuracy of the measured values increases. |
Databáze: | OpenAIRE |
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