Effect of annealing temperature on thermoelectric properties of Ga and In dually doped - ZnO thin films
| Autor: | Heongkyu Ju, Yi-ren Liu, Thu Bao Nguyen Le, Ngoc Kim Pham, Anh Tuan Thanh Pham, Kuei-Hsien Chen, Tosawat Seetawan, Thang Bach Phan, Vinh Cao Tran, Sunglae Cho, Deniz P. Wong, Hanh Kieu Thi Ta, M. Aminzare, Truong Huu Nguyen |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science genetic structures Annealing (metallurgy) Mechanical Engineering Doping Metals and Alloys Analytical chemistry chemistry.chemical_element 02 engineering and technology Zinc 021001 nanoscience & nanotechnology 01 natural sciences eye diseases chemistry Mechanics of Materials 0103 physical sciences Thermoelectric effect Materials Chemistry Figure of merit sense organs Thin film Gallium 0210 nano-technology Indium |
| Zdroj: | Journal of Alloys and Compounds. 747:156-165 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2018.02.349 |
| Popis: | In this paper, thermoelectric performance of the ZnO thin films were investigated via doping (Gallium - Ga and Indium - In) and post-thermal treatment. Various kinds of defects, such as zinc (Zn) vacancies, Ga substitute for Zn, zinc interstitials, oxygen vacancies, oxygen interstitials, oxygen antisite, were induced in the ZnO thin films by doping with Ga, In and post-thermal treatment. Annealed thin films have better thermoelectric performance than unannealed thin films. The figure of merit ZT values at 300 °C were 0.114 and 0.186 for the single Ga-doped ZnO (GZO@500) and dually In, Ga doped ZnO (IGZO@500) thin films annealed at 500 °C, respectively. Higher concentration of zinc interstitial led the GZO@500 thin film to have larger power factor and larger total thermal conductivity, resulting in lower ZT than the IGZO@500 thin film. To the best of our knowledge, the ZT value of 0.186 at 300 °C obtained from our IGZO@500 thin films is the highest ever reported for n-type ZnO based thin films. |
| Databáze: | OpenAIRE |
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