Influence of topological defects on the structure of G and D spectral bands of a single-layer carbon nanotube
| Autor: | Olga E. Glukhova, M. M. Slepchenkov, G. N. Ten, I. I. Bobrinetskii, G. E. Fedorov, R. A. Ibragimov, V. I. Baranov |
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| Rok vydání: | 2016 |
| Předmět: |
Nanotube
Materials science Silicon Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology Substrate (electronics) Chemical vapor deposition Carbon nanotube Conductivity 01 natural sciences Topological defect law.invention Condensed Matter::Materials Science symbols.namesake law 0103 physical sciences 010306 general physics 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry symbols 0210 nano-technology Raman spectroscopy |
| Zdroj: | Optics and Spectroscopy. 120:732-739 |
| ISSN: | 1562-6911 0030-400X |
| DOI: | 10.1134/s0030400x16050258 |
| Popis: | A topological defect in a carbon nanotube grown by chemical vapor deposition from methane onto a silicon substrate with thermal oxide has been investigated and visualized (with a resolution of about 1.5 μm) by confocal Raman spectroscopy. Vibrational Raman spectra of molecular fragments of a single-wall carbon nanotube (SWCNT) without a defect and with Stone–Wales defects (two pentagonal and two heptagonal cells) are calculated. The influence of defects on the shape of G-band components (G+ and G–), which makes it possible to determine the nanotube conductivity type, is considered. |
| Databáze: | OpenAIRE |
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