Two‐phonon laser operation (4.2–77 K) of photopumped AlxGa1−xAs‐GaAs quantum well heterostructures
| Autor: | R. D. Dupuis, D. W. Nam, Nick Holonyak, E. J. Vesely |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
education.field_of_study
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Phonon Population Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Q-switching Semiconductor laser theory law.invention Optical pumping Condensed Matter::Materials Science law Condensed Matter::Superconductivity Stimulated emission Atomic physics education Quantum well |
| Zdroj: | Applied Physics Letters. 57:46-48 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.103573 |
| Popis: | Data are presented showing that photopumped AlxGa1−xAs‐GaAs quantum well heterostructures (QWHs) are capable of stimulated emission (because of the large confined phonon population) one and two longitudinal optical (LO) phonons below the lowest confined‐particle electron‐to‐heavy hole transition (e1→h1). The phonon‐assisted laser operation two phonons below the e1→h1 transition (ΔE=2ℏωLO=2×36 meV) is identified unambiguously using (on a single sample) two types of heat sink configurations, high Q to turn on and low Q to turn off the stimulated emission on the e1→h1 (reference) transition. Because the one‐ and the two‐phonon laser operations (4.2 K) are spectrally very narrow, narrower than that on QW confined‐particle transitions, their separation affords an accurate measurement of QW phonon energy (ℏωLO=36.1 meV). |
| Databáze: | OpenAIRE |
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