Electroluminescence energy efficiency of Si-structures with different compound of nanoscale dislocation complexes
| Autor: | M. O. Kushlyk, D. P. Slobodzyan, B. Pavlyk |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Materials Science (miscellaneous) chemistry.chemical_element Nanochemistry 02 engineering and technology Electroluminescence 010402 general chemistry 01 natural sciences Condensed Matter::Materials Science Radiative transfer Surface layer Electrical and Electronic Engineering Physical and Theoretical Chemistry technology industry and agriculture Cell Biology 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics 0104 chemical sciences chemistry Chemical physics Dislocation 0210 nano-technology Luminescence Biotechnology |
| Zdroj: | Applied Nanoscience. 9:865-871 |
| ISSN: | 2190-5517 2190-5509 |
| Popis: | Changes in the defect structure and luminescence properties of silicon p-type crystals surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated. A special role of dislocations in the surface layer of silicon during the formation its energy spectrum and rebuilding the defective structure was established. It is shown that the concentration of linear defects more than 104 cm−2 enriched subsurface layer with electrically-active complexes (dislocation—oxygen, dislocation—vacancy, dislocation—interstitial atoms of silicon) that are effective radiative recombination centers. It has been demonstrated that mixed treatment of silicon crystals by plastic deformation, high temperature annealing in the flowing oxygen atmosphere and elastic deformation at the final stage increases the energy efficiency of the radiative structures. |
| Databáze: | OpenAIRE |
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