The suppression of misfit dislocation introduction in heavily carbon doped GaAs

Autor:	S.P. Westwater, T.B. Joyce, L. Hart, Tim J. Bullough, B. R. Davidson
Rok vydání:	1997
Předmět:	Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Doping Gallium arsenide Crystallography chemistry.chemical_compound chemistry Transmission electron microscopy Stress relaxation Partial dislocations Relaxation (physics) Dislocation Anisotropy
Zdroj:	Applied Physics Letters. 70:60-62
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.119306
Popis:	The relaxation of heavily carbon doped GaAs, grown on (001) GaAs substrates was investigated using transmission electron microscopy and x-ray diffraction. Misfit dislocation introduction occurred only significantly above Matthews and Blakeslee’s critical thickness, with the onset of relaxation being delayed as the C concentration was increased. The resultant strain relaxation was highly anisotropic with the introduction of As-cored misfit dislocations being totally suppressed at the highest C levels, resulting in cracking of the epilayer. Locking of As-cored partial dislocations and a reduction in misfit dislocation velocity is proposed as the cause of the anisotropy and lack of relaxation.
Databáze:	OpenAIRE
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