Impact of CdZnTe Substrates on MBE HgCdTe Deposition
| Autor: | D. D. Lofgreen, Priyalal Wijewarnasuriya, Scott M. Johnson, J. K. Markunas, R. N. Jacobs, Kelly A. Jones, J. Arias, Jeffrey M. Peterson, L. A. Almeida, M. Reddy, P. J. Smith, L. O. Bubulac, Andrew J. Stoltz, M. Jaime-Vasquez, J. D. Benson |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Auger electron spectroscopy Materials science business.industry Infrared Scanning electron microscope Energy-dispersive X-ray spectroscopy 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Optics 0103 physical sciences Materials Chemistry Optoelectronics Wafer Electrical and Electronic Engineering 0210 nano-technology business Molecular beam epitaxy Dark current |
| Zdroj: | Journal of Electronic Materials. 46:5418-5423 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-017-5599-1 |
| Popis: | The highest sensitivity, lowest dark current infrared focal plane arrays (IRFPAs) are produced using HgCdTe on CdZnTe substrates. As-received state-of-the-art CdZnTe 6 × 6 and 7 × 7.5 cm substrates were analyzed using Nomarski phase contrast microscopy, Auger electron spectroscopy, scanning electron microscopy/energy dispersive spectroscopy, and scanning profilometry. On all CdZnTe substrates tested, we observed as-received large area macro-defect contamination. Using a defect specification limit of 50 contiguous defective pixels, we identified non-compliant 1280 × 720 12-μm pitch focal plane arrays due to as-received substrate macro-defect contamination. Using the above specification, up to 20% IRFPA wafer yield loss is due to state-of-the-art as-received CdZnTe substrate macro-contamination. |
| Databáze: | OpenAIRE |
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