Temperature dependence of vertical transport in quantum Hall multilayers

Autor: D. P. Druist, H. A. Walling, D. P. Dougherty, K. D. Maranowski, Elisabeth G. Gwinn, A. C. Gossard
Rok vydání: 2002
Předmět:
Zdroj: Physica E: Low-dimensional Systems and Nanostructures. 12:132-135
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(01)00285-5
Popis: We study the temperature dependence of vertical transport in GaAs/Al 0.1 Ga 0.9 As multilayers, in the regime of the integer quantum Hall effect. At low temperatures, vertical transport in quantum Hall states occurs on a two-dimensional chiral sheath of edge states near the sidewalls of the sample mesas. At higher temperatures, variable-range hopping through the bulk of the sample dominates. To extend the temperature range of sheath-dominated transport, we increase the device perimeters using fractal-shaped mesas defined by e-beam lithography. We report on the freeze-out of bulk transport and the nearly linear increase of the sheath conductivity with temperature.
Databáze: OpenAIRE