Physical and Topological Modeling of a Volume Condenser Structure with a Schottky Barrier
| Autor: | S. Sh. Rekhviashvili, Anton Boyko, D. S. Gaev |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Schottky barrier Structure (category theory) Model parameters Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Topology Electronic Optical and Magnetic Materials law.invention Capacitor Volume (thermodynamics) Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Equivalent circuit Electrical and Electronic Engineering Condenser (heat transfer) |
| Zdroj: | Russian Microelectronics. 50:347-352 |
| ISSN: | 1608-3415 1063-7397 |
| Popis: | A physical and topological model of an integrated capacitor based on a Schottky barrier is proposed and numerically implemented. It is theoretically shown that by forming a volumetric functional structure of a capacitor, it is possible to achieve a significant increase in its capacity. A distributed equivalent circuit of the capacitor is drawn up, taking into account the design and technological features. A SPICE-model of an integral capacitor is constructed and the model parameters are identified using a numerical example. Using circuitry modeling, the influence of the parasitic parameters on the characteristics of the integrated capacitor is studied. |
| Databáze: | OpenAIRE |
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