Metal-Gate/High-$\kappa$/Ge nMOS at Small CET With Higher Mobility Than $\hbox{SiO}_{2}/\hbox{Si}$ at Wide Range Carrier Densities
| Autor: | Min-Chen Lin, Xiaoyan Liu, T. C. Ku, Jinfeng Kang, Albert Chin, Lang Zeng, C.C. Liao |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) chemistry.chemical_element Germanium Laser Electronic Optical and Magnetic Materials law.invention Charge-carrier density chemistry law Subthreshold swing MOSFET Electronic engineering Optoelectronics Electrical and Electronic Engineering business Metal gate NMOS logic |
| Zdroj: | IEEE Electron Device Letters. 34:163-165 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2012.2230241 |
| Popis: | High-performance TaN/TiLaO/La2O3/SiO2/ (111)-Ge nMOSFETs show high mobility of 432 cm2/V ·s at 1013 cm-2 carrier density (Ns), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO2/Si universal mobility at wide medium-high Ns range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO2 interfacial layer, and YbGex/n-Ge contact. |
| Databáze: | OpenAIRE |
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