Surface kinetics study of metal-organic vapor phase epitaxy of GaAs 1−y Bi y on offcut and mesa-patterned GaAs substrates
| Autor: | Thomas F. Kuech, Honghyuk Kim, Luke J. Mawst, Yingxin Guan, Susan E. Babcock, Kamran Forghani |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Alloy Nanotechnology 02 engineering and technology Substrate (electronics) engineering.material 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Inorganic Chemistry Metal Crystallography visual_art Phase (matter) 0103 physical sciences Materials Chemistry visual_art.visual_art_medium engineering Growth rate 0210 nano-technology Layer (electronics) Vicinal |
| Zdroj: | Journal of Crystal Growth. 464:39-48 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2017.01.043 |
| Popis: | The influence of the surface step termination on the metal-organic vapor phase epitaxy of GaAs 1−y Bi y was explored by examining the epitaxial layer growth rate, composition, and morphology characteristics on the offcut and mesa-patterned (001) GaAs substrates. Vicinal surfaces offcut to (111)B with a high density of As-terminated steps (‘B-steps’) increased the GaAs 1−y Bi y layer growth rate as well as possessed the fastest lateral growth rate on mesa-patterned substrates at a growth temperature of 420 °C, indicating that B-steps enhanced the Ga incorporation. With Bi accumulation on the surface, the Ga incorporation rate was reduced by the Bi preferential presence at B-steps blocking the Ga incorporation. Vicinal surfaces offcut to (111)A, which generated Ga-terminated steps (‘A-steps’) enhanced the Bi incorporation rate during growth at 380 °C. This work reveals that the surface step termination plays an important role in the growth of the metastable alloy. Appropriate choices of both the substrate surface-step structure and other growth parameters could lead to an enhanced Bi incorporation. |
| Databáze: | OpenAIRE |
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