Current Sharing Analysis of SiC Power Modules in Parallel Operation
Autor: | Khalid Alkhalid, Yue Zhang, Boxue Hu, Zhining Zhang, Xiao Li, Jin Wang, Faisal Alsaif |
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Rok vydání: | 2020 |
Předmět: |
Materials science
Steady state (electronics) business.industry 05 social sciences Electrical engineering 020207 software engineering 02 engineering and technology Input impedance Inductance Power module 0202 electrical engineering electronic engineering information engineering Gate driver 0501 psychology and cognitive sciences Power semiconductor device business Electrical impedance 050107 human factors Electronic circuit |
Zdroj: | 2020 IEEE Energy Conversion Congress and Exposition (ECCE). |
DOI: | 10.1109/ecce44975.2020.9236326 |
Popis: | This paper seeks to study the contributing factors to current mismatch among parallelled SiC power modules, including the gate driver circuits, and the impedance of the bus barsm, the load connection and the load impedance. Compared with using silicon power devices, the effect of impedance asymmetry and inductive coupling is more pronounced with SiC power modules due to significantly lower on-resistance, lower load inductance and higher steady state di/dt. It is also revealed that nanosecond-level mismatch in the gate driver circuits can lead to significant dynamic current mismatch. Hardware tests and detailed simulations are carried out to explore these effects, and finally achieving 2.41% mismatch in dynamic switching energy and minimal mismatch in the steady state current sharing. |
Databáze: | OpenAIRE |
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