Comparison of the electric properties of single-crystal and polycrystalline diamond by hall effect and capacitance-voltage measurements
| Autor: | J. A. von Windheim, Kalyankumar Das, V. Venkatesan, D. M. Malta |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Mechanical Engineering Doping Analytical chemistry Diamond General Chemistry Chemical vapor deposition engineering.material Electronic Optical and Magnetic Materials Hall effect Electrical resistivity and conductivity Materials Chemistry engineering Grain boundary Crystallite Electrical and Electronic Engineering Single crystal |
| Zdroj: | Diamond and Related Materials. 2:841-846 |
| ISSN: | 0925-9635 |
| Popis: | The transport properties of type IIb (naturally B-doped), single-crystal diamond were investigated by differential capacitance-voltage ( C - V ) measurements, Hall effect measurements and resistivity measurements. The results for the Hall effect and resistivity measurements on single-crystal samples were compared with similar measurements on polycrystalline samples grown by microwave-assisted chemical vapor deposition. The C - V and Hall effect measurements on single crystal, type IIb diamond samples showed consistent results. Temperature-dependent resistivity measurements verified an activation energy of 0.36 eV, while room temperature Hall effect measurements on a (100)-oriented, type IIb single crystal indicated that the active carrier concentration was 2.1 × 10 13 cm −3 . This result was consistent with total B concentrations measured by both C - V and secondary ion mass spectroscopy (SIMS). The transport properties for polycrystalline samples were not as good as those for single-crystal samples. At room temperature, the mobilities were 3 and 10 cm 2 V −1 s −1 for two in situ doped polycrystalline thin films, as compared with 325 cm 2 V −1 s −1 for the single-crystal sample. For one in situ doped sample, the activation energy was measured to be 0.05 eV and the room temperature carrier concentration was 1.8 × 10 16 cm −3 , while SIMS indicated that the total atomic B concentration was 5 × 10 18 cm −3 . The relatively low carrier concentrations measured in the polycrystalline samples may be indicative of a high level of compensation (about 65%) or trapping of charge at the grain boundaries, leading to a depletion of carriers in the crystallites. |
| Databáze: | OpenAIRE |
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