Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation

Autor:	Y. Marfaing, J. F. Rommeluère, I. Chèze, Alain Lusson, Dominique Ballutaud, L. Svob
Rok vydání:	1998
Předmět:	Dopant Chemistry chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Epitaxy Acceptor Inorganic Chemistry Crystallography chemistry.chemical_compound Arsine Phase (matter) Materials Chemistry Metalorganic vapour phase epitaxy Arsenic
Zdroj:	Journal of Crystal Growth. :459-464
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(98)80096-1
Popis:	Substrate (GaAs) orientation dependence of arsenic incorporation in MOVPE-grown CdTe is reported. Arsine was used as the dopant carrier gas. The substrate orientations were (1 0 0), (5 1 1)A, B, (3 1 1)A, B and (2 1 1 )A, B. The highest incorporation was obtained for (1 0 0) substrates and the lowest for (2 1 1 )A orientation. As a general rule, incorporation was larger on B faces compared to A ones. A strong polarity dependence was observed between (2 1 1)B and (2 1 1 )A surfaces with arsenic concentration differing by an order of magnitude. Thermal anneals led to acceptor activation with maximum hole conductivities related to the amount of incorporated arsenic. Analysis of these results was done by considering the bonding geometry of the different exposed surfaces and the fact that As is introduced through an intermediate species formed in the vapour phase, the adduct DimethylCd-ASH 3 .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a412a8a479e031c21ee33349658c8fd1 https://doi.org/10.1016/s0022-0248(98)80096-1 Zobrazit plný text záznamu Full Text from ScienceDirect