Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites
| Autor: | Eduardo Alves, A.J. Neves, M. Bockowski, Maria R. Correia, Veit Hoffmann, D. Nd. Faye, Markus Weyers, Teresa Monteiro, N. Ben Sedrine, Katharina Lorenz, Joana Rodrigues |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
education.field_of_study Materials science Photoluminescence Annealing (metallurgy) business.industry Superlattice Population Doping 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 0103 physical sciences Optoelectronics General Materials Science Photoluminescence excitation 0210 nano-technology education business Quantum well Diode |
| Zdroj: | ACS Applied Nano Materials. 1:3845-3858 |
| ISSN: | 2574-0970 |
| DOI: | 10.1021/acsanm.8b00612 |
| Popis: | In this work, we have established the effects of postgrowth annealing and Eu implantation, followed by annealing on an AlGaN/GaN superlattice-based diode structure, containing Mg-doped GaN top p-cap layers. The study is based on the combined information from different optical techniques, such as Raman, photoluminescence, and photoluminescence excitation. We have shown that the diode structure exhibits a stable crystalline quality even after annealing under high temperature and high pressure (HTHP) conditions (1400 °C in 1 GPa N2). Furthermore, we have demonstrated that the implanted Eu ions reached the first quantum wells of the diode structure and that the postimplantation thermal annealing partly removed the implantation defects, recovering some of the as-grown luminescence and optically activating the Eu3+ in the diode structure. An in-depth study of the Eu3+ population mechanisms was realized through room temperature photoluminescence excitation. A model was built based on the different excitation ban... |
| Databáze: | OpenAIRE |
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