Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation
| Autor: | Sh. D. Kurmashev, V. E. Gorbachev, I. M. Vikulin |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Annealing (metallurgy) Transistor Electron Amplification factor equipment and supplies Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Ionizing radiation law 0103 physical sciences Optoelectronics 010306 general physics business Order of magnitude Radiation resistance Common emitter |
| Zdroj: | Semiconductors. 51:1354-1359 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782617100190 |
| Popis: | The influence of the effective concentration of an impurity specifying the conduction type of the base region and the base thickness on the radiation resistance of transistor temperature sensors is investigated. The dependences of the forward voltage drop at the emitter transistor junction and current amplification factor on the magnitude of electron, neutron, and γ-quanta flows are revealed. It is found that degradation of the forward voltage drop under the effect of ionizing radiation begins at doses higher by almost two orders of magnitude than the current amplification factor depending on the transistor’s design features. The reproducibility of the temperature-sensitive parameter, which increases the yield percentage of suitable devices, increases after annealing of the electron-irradiated structures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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