Thermal Analysis of High-Power Flip-Chip-Bonded Photodiodes
| Autor: | Patrick E. Hopkins, Yang Shen, John T. Gaskins, Ramez Cheaito, Brian M. Foley, Xiaojun Xie, Joe C. Campbell |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry Thermal resistance 02 engineering and technology Chemical vapor deposition Atomic and Molecular Physics and Optics Photodiode law.invention 020210 optoelectronics & photonics Thermal conductivity law 0202 electrical engineering electronic engineering information engineering Electronic engineering Optoelectronics Interfacial thermal resistance Thermal analysis business Flip chip Power density |
| Zdroj: | Journal of Lightwave Technology. 35:4242-4246 |
| ISSN: | 1558-2213 0733-8724 |
| DOI: | 10.1109/jlt.2017.2736884 |
| Popis: | The performance of high-power photodiodes flip-chip bonded on polycrystalline aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance (inverse of the thermal boundary resistance) between submount/titanium interfaces was measured and found to be the primary impedance to heat dissipation. Thermal profiles of the flip-chip-bonded devices were simulated to project the power density at failure, which is found to be inversely proportional to the diameter of the photodiodes. |
| Databáze: | OpenAIRE |
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