Extended wavelength InGaAs-Based avalanche photodiodes for single photon counting applications

Autor:	Krys Slomkowski, Bora M. Onat, Mark A. Itzler
Rok vydání:	2012
Předmět:	Materials science business.industry Avalanche photodiode Photon counting Gallium arsenide Wavelength chemistry.chemical_compound Optics chemistry Breakdown voltage Optoelectronics Photonics business Indium gallium arsenide Dark current
Zdroj:	IEEE Photonics Conference 2012.
DOI:	10.1109/ipcon.2012.6358506
Popis:	We present our design and characterization on SPADs and NFADs with InGaAs/GaAsSb Type II SL absorber regions on InP substrates with extended wavelength detection up to 2.4µm wavelengths for single photon counting applications. Packaged devices showed very low variation at −40oC, with ∼100nA dark current at 2 volts below breakdown voltage. The measured DCR was 106 Hz at 2 volts excess bias at 223K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a3dc87261afa5fd222fd4d15c9cc149d https://doi.org/10.1109/ipcon.2012.6358506 Zobrazit plný text záznamu