Microstructure effects on quantum efficiency in PtSi/p-Si(100) Schottky barrier detector
| Autor: | Chun-Yen Chang, Chia Ho, Tsu Chang, Chung-Sen Wu, Gwo-Ji Horng |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon business.industry Schottky barrier chemistry.chemical_element Condensed Matter Physics Microstructure Platinum silicide chemistry.chemical_compound Optics Electron diffraction chemistry Optoelectronics General Materials Science Quantum efficiency Thin film business High-resolution transmission electron microscopy |
| Zdroj: | Materials Chemistry and Physics. 68:17-21 |
| ISSN: | 0254-0584 |
| Popis: | The microstructure effects on the performance of the PtSi Schottky barrier detector (SBD) have been investigated in detail. The growth temperatures were ranged from 350 to 550C. The thickness of the PtSi film measured by high resolution transmission electron microscopy (HRTEM) is around 4 nm. The electron diffraction pattern shows an intermingling of both (1 N |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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