High-Gain AlGaN Solar-Blind Avalanche Photodiodes
| Autor: | Zhen Guang Shao, Liang Li, Wenjun Luo, Youdou Zheng, Da Peng Cao, Dunjun Chen, Rong Zhang, Hai Lu, Zhong Hui Li |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
APDS business.industry Photoelectrochemistry Wide-bandgap semiconductor Chemical vapor deposition Avalanche photodiode Electronic Optical and Magnetic Materials law.invention law Etching (microfabrication) Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Absorption (electromagnetic radiation) |
| Zdroj: | IEEE Electron Device Letters. 35:372-374 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2013.2296658 |
| Popis: | This letter reports high performance AlGaN solar-blind avalanche photodiodes (APDs) with separate absorption and multiplication structure grown by metal-organic chemical vapor deposition on AlN templates. In fabricating APD devices, we applied a photo-electrochemical treatment process after mesa etching to reduce damage induced by etching. After introducing this process, the leakage current of the fabricated devices was reduced obviously and a record-high gain of 1.2×104 at the reverse bias of 84 V was achieved under the measurement condition with the protection current constrained to 10-5 A. |
| Databáze: | OpenAIRE |
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