A 12-18 GHz medium-power GaAs MESFET amplifier

Autor:	K.B. Niclas, W.R. Hitchens, R.B. Gold, W.T. Wilser
Rok vydání:	1978
Předmět:	Power gain Materials science business.industry Amplifier RF power amplifier Transistor Distributed amplifier Electrical engineering Transistor array Insulated-gate bipolar transistor law.invention law Optoelectronics MESFET Electrical and Electronic Engineering business
Zdroj:	IEEE Journal of Solid-State Circuits. 13:520-527
ISSN:	1558-173X 0018-9200
DOI:	10.1109/jssc.1978.1051088
Popis:	Two medium-power 12-18 GHz GaAs FET amplifiers, one single-ended and one balanced, have been developed. A minimum output power across the Ku-band of 200 mW with an associated gain of 4.0 dB was achieved with the balanced module. The transistor used in this study has gate dimensions of 300/spl times/1/spl mu/m. The technology, RF performance, and characterization of the transistor are discussed in detail, as are the design and performance of both single-ended and balanced amplifier modules.
Databáze:	OpenAIRE
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