Autor:	M. Laviron, R. Funck, C. Vergnolle
Rok vydání:	2005
Předmět:	Materials science business.industry Epitaxy Power (physics) Gallium arsenide chemistry.chemical_compound Electricity generation chemistry Etching (microfabrication) Equivalent circuit Optoelectronics Wafer business Microwave
Zdroj:	1975 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
Popis:	The development of a high-power GaAs FET using an interdigitated structure produced by ionic etching on a NP+ epitaxial wafer will be discussed, citing its power output (1W), efficiency (35%) and gain (6 dB) achieved at 6 GHz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a3948e447320591959f0d1df46cf4abc https://doi.org/10.1109/isscc.1975.1155419 Zobrazit plný text záznamu