Muon diffusion and trapping studies in high purity vanadium

Autor:	Don M. Parkin, D. K. Rehbein, M. E. Schillaci, J. A. Brown, Anthony T. Fiory, M. Leon, R. L. Hutson, R. H. Heffner, O. N. Carlson, W. B. Gauster
Rok vydání:	1979
Předmět:	Nuclear and High Energy Physics Muon Diffusion Doping Analytical chemistry chemistry.chemical_element Vanadium Trapping Condensed Matter Physics Oxygen Atomic and Molecular Physics and Optics chemistry Impurity Crystallite Physical and Theoretical Chemistry
Zdroj:	Hyperfine Interactions. 6:237-240
ISSN:	1572-9540 0304-3843
DOI:	10.1007/bf01028799
Popis:	We present the first results of a study of the effects of varying impurity concentration on the temperature dependence of the depolarization rate of positive muons implanted into vanadium. Data are reported for the most highly purified polycrystalline sample yet measured, and the same sample subsequently doped with about 500 ppm oxygen by weight. The data for the pure sample shows a low depolarization rate (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a38ca4c93e81279ab868ef7d65fd90c3 https://doi.org/10.1007/bf01028799 Zobrazit plný text záznamu Full text from SpringerLink