On the existence of a nanometric multilayered structure in Al2O3/Al thin films
| Autor: | C. Le Paven-Thivet, C. Malibert, Ph. Houdy, P. Aubert, A. Zozime, S. Fusil |
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| Rok vydání: | 2004 |
| Předmět: |
Aluminium oxides
Silicon Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Secondary ion mass spectrometry chemistry.chemical_compound chemistry Sputtering Aluminium Materials Chemistry Aluminium oxide Thin film |
| Zdroj: | Thin Solid Films. 446:147-154 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(03)01389-0 |
| Popis: | Al 2 O 3 /Al films (period thickness Λ=20, 40 nm) were deposited onto (1 0 0) silicon substrate by reactive r.f. sputtering for substrate temperatures ( T s ) ranging from −90 to 600 °C. Secondary ion mass spectrometry demonstrated the deposition of Al 2 O 3 /Al stratified thin films with the generation of periodic signals. X-ray reflectometry confirmed the periodicity with the presence of Bragg peaks in the experimental patterns. Nevertheless, the multilayered character of Al 2 O 3 /Al films is less and less pronounced as T s increases. At low T s , the relevant parameter to account for the absence of abrupt interfaces is the roughness of layers due to the aluminium layers, while at high T s , the chemical interdiffusion clearly dominates. |
| Databáze: | OpenAIRE |
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