High single-mode power conversion efficiency vertical-cavity top-surface-emitting lasers
Autor: | S.A. Chalmers, Kevin L. Lear |
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Rok vydání: | 1993 |
Předmět: |
Materials science
business.industry Energy conversion efficiency Single-mode optical fiber Heterojunction Semiconductor device Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Semiconductor laser theory Optics law Optoelectronics Electrical and Electronic Engineering business Molecular beam Molecular beam epitaxy |
Zdroj: | IEEE Photonics Technology Letters. 5:972-975 |
ISSN: | 1941-0174 1041-1135 |
Popis: | We report advances in the power conversion (wall-plug) efficiency of vertical-cavity top-surface-emitting lasers. The devices were fabricated from molecular beam epitaxial layers using deep proton implants to define gain-guided lasers. The epitaxial structure included low resistance, piecewise linearly graded n-type and p-type mirrors, a triple In/sub 0.2/Ga/sub 0.8/As quantum-well active region, and a delta-doped contact layer. Power conversion efficiencies as high as 12.7% for continuous-wave single-mode operation were measured after several hours of device operation. > |
Databáze: | OpenAIRE |
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