| Autor: |
Heinz Schmid, Jürgen Furthmüller, Marcel A. Verheijen, Sebastian Kölling, Alain Dijkstra, Erik P. A. M. Bakkers, Friedhelm Bechstedt, Jens Renè Suckert, Elham M. T. Fadaly, Jos E. M. Haverkort, M. A. J. V. Tilburg, Jonathan J. Finley, Dorian Ziss, V. T. V. Lange, Julian Stangl, Silvana Botti, Philipp Staudinger, D. Busse, Claudia Rödl |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Novel In-Plane Semiconductor Lasers XIX. |
| DOI: |
10.1117/12.2544968 |
| Popis: |
Hexagonal SiGe has been theoretically shown to feature a tunable direct bandgap in the range 0.4-0.8eV. We study arrays of site-selectively grown Si_(1-x)-Ge_x nanowires (NWs) grown using the crystal transfer method in which wurtzite GaP core NWs are used as template for SiGe growth. Our approach opens up routes towards photonic band-edge lasers using group-IV NWs. Low-temperature µPL studies of arrays of SiGe NW-arrays reveal strong emission at 0.395eV and linear power dependence for weak excitation levels (P_ex~0.01-1kW/cm^2). For P_ex>4kW/cm^2, a new peak emerges at 0.37eV with an intensity that increases according to ~(P_ex)^5, indicative of stimulated emission close to the photonic band-edge. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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