Controlling of Schottky barrier heights for Au/n‐GaAs and Ti/n‐GaAs with hydrogen introduced after metal deposition by bias annealing
| Autor: | Bing Chen Li, M. H. Yuan, Hua-Ding Song, Guo Sheng Sun, S. X. Jin, Weihua Mao, Haobin Wang, Xiong Wei Hu, Ze Ying Ren, Hao Wang, G. G. Qin |
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| Rok vydání: | 1993 |
| Předmět: | |
| Zdroj: | Applied Physics Letters. 62:2719-2721 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | Up to now, in most of the research work done on the effect of hydrogen on a Schottky barrier, the hydrogen was introduced into the semiconductor before metal deposition. This letter reports that hydrogen can be effectively introduced into the Schottky barriers (SBs) of Au/n-GaAs and Ti/n-GaAs by plasma hydrogen treatment (PHT) after metal deposition on [100] oriented n-GaAs substrates. The Schottky barrier height (SBH) of a SB containing hydrogen shows the zero/reverse bias annealing (ZBA/RBA) effect. ZBA makes the SBH decrease and RBA makes it increase. The variations in the SBHs are reversible. In order to obtain obvious ZBA/RBA effects, selection of the temperature for plasma hydrogen treatment is important, and it is indicated that 100-degrees-C for Au/n-GaAs and 150-degrees-C for Ti/n-GaAs are suitable temperatures. It is concluded from the analysis of experimental results that only the hydrogen located at or near the metal-semiconductor interface, rather than the hydrogen in the bulk of either the semiconductor or the metal, is responsible for the ZBA/RBA effect on SBH. |
| Databáze: | OpenAIRE |
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