Complementary Si MESFET concept using silicon-on-sapphire technology

Autor:	JO Nylander, Herman Norde, PA Tove, K Bohlin, Ferenc Masszi, J Tirén, U Magnusson
Rok vydání:	1988
Předmět:	Materials science Silicon business.industry Transistor Schottky diode chemistry.chemical_element Integrated circuit Electronic Optical and Magnetic Materials law.invention Silicon on sapphire chemistry law Optoelectronics MESFET Field-effect transistor Electrical and Electronic Engineering business
Zdroj:	IEEE Electron Device Letters. 9:47-49
ISSN:	1558-0563 0741-3106
DOI:	10.1109/55.20409
Popis:	Complementary Si MESFETs (CMES) for integrated circuits using silicon-on-sapphire are described. Not only the gate, but also the source and drain of the n-transistors and p-transistors are Schottky junctions, using very high barrier heights for the gate and low barrier heights for source and drain. Only two Schottky metals are used: one, Ir or Pt, giving a high barrier on nSi, and hence low on pSi; the other, Er or Tb, showing the opposite behavior. The basic differences between MES and MOS are pointed out and design criteria for CMES inverters using normally-off type transistors are given. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a37bd344770fd6263dfa5ce42a8c1ac0 https://doi.org/10.1109/55.20409 Zobrazit plný text záznamu