Low threshold current of GalnAsP laser grown on directly bonded InP/Si substrate
| Autor: | Hirokazu Sugiyama, Kazuki Uchida, Yuya Onuki, Naoki Kamada, Kazuhiko Shimomura, Tetsuo Nishiyama, Natsuki Hayasaka, Xu Han, Gandhi Kallarasan Periyanayagam, Masaki Aikawa |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Threshold current business.industry Doping 02 engineering and technology 021001 nanoscience & nanotechnology Cladding (fiber optics) Laser 01 natural sciences law.invention Si substrate law 0103 physical sciences Optoelectronics Metalorganic vapour phase epitaxy 0210 nano-technology business |
| Zdroj: | 2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). |
| DOI: | 10.1109/cleopr.2017.8119024 |
| Popis: | Low threshold current 1.5pm GalnAsP laser was obtained grown on directly bonded InP/Si substrate using MOVPE. To decrease the threshold current, the thickness and doping condition of p-InP cladding layer were optimized. In the new structure laser, the threshold current became half compared to the previous structure laser, and obtained almost comparable threshold current with the laser grown on InP substrate. |
| Databáze: | OpenAIRE |
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