Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction

Autor:	O. Salehzadeh, Simon P. Watkins, Ray R. LaPierre, Ali Darbandi, P Kuyanov
Rok vydání:	2014
Předmět:	Materials science Passivation business.industry Doping Fermi level Nanowire General Physics and Astronomy Nanotechnology Epitaxy symbols.namesake Electrical resistivity and conductivity symbols Optoelectronics Metalorganic vapour phase epitaxy business Surface states
Zdroj:	Journal of Applied Physics. 115:234305
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.4883960
Popis:	We report on the surface passivation of Au-assisted Te-doped GaAs nanowires (NWs) grown by metalorganic vapor phase epitaxy. The electrical properties of individual free standing NWs were assessed using a tungsten nano-probe inside a scanning electron microscope. The diameter independent apparent resistivity of both strained and relaxed passivated NWs suggests the unpinning of the Fermi level and reduction of sidewalls surface states density. Similar current-voltage properties were observed for partially axially relaxed GaAs/GaP NWs. This indicates a negligible contribution of misfit dislocations in the charge transport properties of the NWs. Low temperature micro-photoluminescence (μ-PL) measurements were also carried out for both uncapped and passivated GaAs NWs. The improvement of the integrated (μ-PL) intensity for GaAs/GaP NWs further confirms the effect of passivation.
Databáze:	OpenAIRE
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