Measurement of the normal thermal diffusivity of a dielectric film by a pulsed photoacoustic method

Autor:	Mansureh Ganjali, A V Sukhodolov, E. V. Ivakin, A. Ya. Khairullina, T. Sawada
Rok vydání:	2004
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Substrate (electronics) Dielectric Condensed Matter Physics Thermal diffusivity Optics chemistry Thermal Optoelectronics Nanometre Thin film business Spectroscopy Excitation
Zdroj:	Journal of Applied Spectroscopy. 71:869-874
ISSN:	1573-8647 0021-9037
DOI:	10.1007/s10812-005-0014-8
Popis:	A method of determining the thermal diffusivity χ⊥ of a thin film of a transparent dielectric in the direction normal to the surface has been developed. It is based on excitation of reflecting dynamic gratings. The effectiveness of the method is checked experimentally with the example of a thermally oxidized submicron SiO2 film on a silicon substrate. The temperature dependence of χ⊥ in the range 290–420 K is measured. The possibilities of setting up thermal measurements of films tens of nanometers thick and its problems are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a34a4eb9aadde23c9737c35275c5a0b1 https://doi.org/10.1007/s10812-005-0014-8 Zobrazit plný text záznamu Plný text ve formátu PDF