Gas jet deposition of thin films
| Autor: | J.W. Golz, Y. Di, J. J. Schmitt, D. L. Johnson, B. L. Halpern |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Jet (fluid)
Materials science business.industry Analytical chemistry Oxide General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Substrate (electronics) Nitride Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound Semiconductor chemistry Deposition (phase transition) Optoelectronics Thin film business Helium |
| Zdroj: | Applied Surface Science. :19-26 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(91)90302-z |
| Popis: | A novel approach to thin film deposition is presented, which combines supersonic gas jets with fast flow techniques for the “gas jet deposition” (GJD) of metal, semiconductor, oxide, nitride, and organic thin films. The vapor sources are supersonic jets, usually of helium and hydrogen, which convect condensible vapors to a wide range of substrates. Areas larger than the jet area can be coated by moving the substrate relative to the jet. GJD provides numerous advantages. The apparatus is simple and flexible, and requires only high-speed mechanical pumps rather than high-vacuum equipment with attendant long pumpdown times. The paper describes several kinds of GJD apparatus as well as examples of GJD films and applications. These include multilayer structures, oxide and eitride films, gold elelectron deposition on heat-sensitive piezoelectric plastic, and trapping of “guest” rhodamine dye molecules in silicon dioxide and nitride “host” films. |
| Databáze: | OpenAIRE |
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