Recent Progress in Thin-Film Silicon Photovoltaic Technologies
| Autor: | Shinohara, W., Aya, Y., Hishida, M., Kitahara, N., Nakagawa, M., Terakawa, A., Tanaka, M. |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
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| DOI: | 10.4229/25theupvsec2010-3bo.12.3 |
| Popis: | 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 2735-2739 Thin-Film solar panels consisting of hydrogenated silicon (a-Si:H) and micro-crystalline silicon (μc- Si:H) have been investigated. The main purpose of this research is to achieve a good balance among the high conversion efficiency, large panel size and high deposition rate of μc-Si:H for mass production. For this purpose, an original technology called the Localized Plasma Confinement CVD (LPC-CVD) method is investigated. By using this method, an a-Si:H/μc-Si:H solar panel, whose size is Gen. 5.5 (1,100 mm x 1,400 mm) and μc-Si:H deposition rate is 2.4 nm/s, with a conversion efficiency of 11.1% (Voc=161.7 V, Isc=1.46 A, F.F.=72.4%, Pmax=171W) is obtained. And it is experimentally confirmed that the panel has a stabilized efficiency of 10.0%. Then, new ideas about optical confinement technologies and thin-film preparation using a non-vacuum method to meet the cost requirement for grid parity are introduced. A Gen. 5.5 size solar panel with a back electrode using a non-vacuum process is fabricated. The conversion efficiency is 10.4% (Voc=160.7 V, Isc=1.40°, F.F.=71.2%, Pmax=160 W). |
| Databáze: | OpenAIRE |
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