Indium-gallium–zinc oxide (IGZO) thin-film gas sensors prepared via post-deposition high-pressure annealing for NO2 detection
| Autor: | Ki-Woo Song, Hyun-Jin Shin, Hyun-Woong Choi, Seong-Hyun Kim, Sunil Babu Eadi, Nguyen Kim Thah, Hi-Doek Lee |
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| Rok vydání: | 2022 |
| Předmět: |
Indium gallium zinc oxide
Materials science Annealing (metallurgy) Metals and Alloys Oxide Analytical chemistry Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Sputtering Electrode Materials Chemistry Crystallite Electrical and Electronic Engineering Thin film Instrumentation Deposition (law) |
| Zdroj: | Sensors and Actuators B: Chemical. 353:131082 |
| ISSN: | 0925-4005 |
| Popis: | Different indium–gallium–zinc oxide (IGZO) thin films were prepared in a N2 environment by varying the annealing pressure and then tested for NO2 gas detection. These thin films, whose average thickness ranged between 5 and 100 nm, were deposited via the sputtering on alumina substrates equipped with interdigitated Au electrodes using an IGZO polycrystalline target (ZnO: Ga2O3:In2O3 = 1:1:1 mol %). The effects of annealing pressure and environment were investigated. A superior sensor response (S) was observed when increasing the annealing pressure; the prepared IGZO thin film showed an S of ~800 at an operating temperature of 250 °C for 25 ppm NO2 gas. The recovery time decreased with increasing the annealing temperature. The sensor annealed at 400 °C at 3 atm showed superior selectivity to various gases and longtime stability of 60 days was attained. The role of the oxygen vacancies in the sensor performance was also investigated. |
| Databáze: | OpenAIRE |
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