Growth of HfO2/TiO2nanolaminates by atomic layer deposition and HfO2-TiO2by atomic partial layer deposition
| Autor: | Ángel Rodríguez, Eduardo Martínez-Guerra, M. M. Turrubiartes, Heber Hernández-Arriaga, M. A. Vidal, E. López-Luna |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Kelvin probe force microscope Materials science Fabrication Analytical chemistry General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic layer deposition 0103 physical sciences Monolayer Microscopy Atomic layer epitaxy Deposition (phase transition) 0210 nano-technology Layer (electronics) |
| Zdroj: | Journal of Applied Physics. 121:064302 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | A novel growth technique, called atomic partial layer deposition (APLD), has been proposed to expand the applications of, and the research in, atomic layer deposition (ALD). This technique allows the possibility for the fabrication of well-controlled alloys on a single atomic layer scale. To demonstrate the capabilities of this technique, samples of HfO2 and TiO2 were prepared as conventional ALD nanolaminates through the repeated exposure of the separated metal-precursor and reactant. Subsequently, HfO2-TiO2 APLD growth mode samples were obtained by varying the precursor doses and exposure times to obtain a fractional coverage in the monolayer of Hf and Ti. The thickness and structure of the samples were studied by X-ray reflectivity. The surface topography was studied using atomic force microscopy along with Kelvin probe force microscopy for surface potential mapping. Clear differences on the surface, compared with the conventional HfO2/TiO2 ALD nanolaminates, were observed, which confirmed the HfO2-TiO... |
| Databáze: | OpenAIRE |
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