Transparent highly oriented 3C-SiC bulks by halide laser CVD
| Autor: | Youfeng Lai, Mingwei Hu, Hong Cheng, Rong Tu, Song Zhang, Meijun Yang, Qizhong Li, Lianmeng Zhang, Takashi Goto, Mingxu Han |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Halide Optical transmittance 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Laser Microstructure 01 natural sciences law.invention Deposition temperature law 0103 physical sciences Materials Chemistry Ceramics and Composites Transmittance Composite material Total pressure 0210 nano-technology |
| Zdroj: | Journal of the European Ceramic Society. 38:3057-3063 |
| ISSN: | 0955-2219 |
| DOI: | 10.1016/j.jeurceramsoc.2018.03.015 |
| Popis: | Transparent and highly oriented 3C-SiC bulks were speedily fabricated at deposition temperature (Tdep) of 1623 K by halide laser chemical vapor deposition (HLCVD). The effect of total pressure (Ptot) on the optical transmittance, preferred orientation, microstructure, deposition rate (Rdep) and micro-hardness were investigated. The maximum Rdep of the transparent 3C-SiC reached 2450 μm/h at Ptot = 10 kPa. With an increase in Ptot, the transmittance of 3C-SiC bulks increased firstly, and then decreased. At Ptot = 10 kPa, 3C-SiC bulk, a highly -oriented and low density of defects, showed the highest transmittance, greater than 55% in the wavelength range of 800–1100 nm. At Ptot = 4 kPa and 20 kPa, 3C-SiC bulks showed much lower transmittance, in which contained poorly oriented grains and numerous defects. The Vickers micro-hardness of 3C-SiC bulks increased with increasing Ptot and showed the highest value of 34.8 GPa at Ptot = 40 kPa. |
| Databáze: | OpenAIRE |
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