Transport properties of Zn doped CuInSe/sub 2/ single crystals

Autor:	S. I. Radautsan, Yu. Roznovan, V. Tezlevan
Rok vydání:	2002
Předmět:	Transverse plane Effective mass (solid-state physics) Materials science Condensed matter physics Hall effect Seebeck coefficient Thermoelectric effect Density of states Atmospheric temperature range Transport phenomena
Zdroj:	1995 International Semiconductor Conference. CAS '95 Proceedings.
DOI:	10.1109/smicnd.1995.494875
Popis:	The results of the transport phenomena measurements on n-CuInSe/sub 2/ are presented. For the first time the transverse Nernst-Ettingshausen (N-E) effect is investigated in the I-III-VI/sub 2/ materials. From the results of thermoelectric power, the Hall coefficient and transverse N-E effect measurements values of the density of states effective mass m* at the temperature range investigated have been calculated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a32824227960f1846c9ce2f5f5b8f137 https://doi.org/10.1109/smicnd.1995.494875 Zobrazit plný text záznamu