Effect of the design and technology factors on electrical characteristics of the Au/Ti-n-GaAs Schottky diodes

Autor:	A. V. Netudykhatko, D. N. Zakharov, V. M. Kalygina, A. V. Panin
Rok vydání:	2006
Předmět:	Materials science business.industry Schottky barrier Schottky diode Thermionic emission Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Tunnel effect Semiconductor Depletion region Optoelectronics business Quantum tunnelling Diode
Zdroj:	Semiconductors. 40:728-733
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782606060194
Popis:	Electrical properties of the Au/Ti-n-GaAs Schottky diodes are studied in relation to the production technology. The forward and reverse current-voltage characteristics of the diodes at low electric fields are analyzed on the basis of the mechanism of thermionic emission through the metal-semiconductor barrier. It is assumed that an increase in the reverse currents in the voltage range from 20 to 60 V can be accounted for by the Pool-Frenkel effect. The excess reverse currents at voltages higher than 60 V are caused by the phonon-assisted tunneling via deep states in the depletion region of the semiconductor.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a3278ddf254a6c3a4decd66a134f04b2 https://doi.org/10.1134/s1063782606060194 Zobrazit plný text záznamu Plný text ve formátu PDF