Analysis the complex tradeoff among Eon-VCEsat-SCSOA and EMI noise through the single chip evaluation method
| Autor: | Atsushi Narazaki, Nishi Koichi, Tetsuo Takahashi |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Bipolar junction transistor Detector Electrical engineering 02 engineering and technology Insulated-gate bipolar transistor 01 natural sciences Noise (electronics) Capacitance Compensation (engineering) EMI 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Antenna (radio) business |
| Zdroj: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: | As a compensation for the superior V CEsat , Carrier Stored Trench gate Bipolar Transistor (CSTBT™) has the more complex tradeoff among E on -V CEsat -SCSOA and EMI noise compared to IGBT. EMI noise evaluation is known to need special facilities such as a shield room and antenna detector, which deteriorates an evaluation efficiency and consistency. We found that EMI noise can be indirectly but simply and accurately evaluated by using the surge current under small current turn-on of single-chip IGBTs without any EMI shield facilities. By using this method, maintaining the CSTBT's better tradeoff among E on -V CEsat -SCSOA, we have succeeded to reduce the EMI noise by decreasing Carrier Stored Layer doping concentration and/or gate-collector capacitance while adjusting channel density. |
| Databáze: | OpenAIRE |
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