A new mask linearity specification for EUV masks based on time dependent dielectric breakdown requirements
| Autor: | Keith Standiford, Christian Bürgel |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Dielectric strength business.industry Extreme ultraviolet lithography Astrophysics::Instrumentation and Methods for Astrophysics Linearity Time-dependent gate oxide breakdown Optics Computer Science::Sound Extreme ultraviolet Proximity effect (audio) Cathode ray Optoelectronics Photomask business |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2023109 |
| Popis: | When compared to conventional chrome absorber masks, electron beam patterning of EUV masks requires additional corrections to account for intermediate range electron backscattering from the mirror and tantalum based absorber layers. The performance of this Mask Proximity Correction software should not be specified based solely on traditional mask linearity measures. We propose a new mask linearity specification based on Time Dependent Dielectric Breakdown requirements for metal layers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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