On the Determination of the Back Contact Barrier Height of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells
| Autor: | Dennis Muecke, Ricardo Vidal Lorbada, Thomas Walter, Tetiana Lavrenko |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Admittance business.industry 020209 energy 02 engineering and technology 021001 nanoscience & nanotechnology Copper indium gallium selenide solar cells Capacitance Temperature measurement Contact barrier 0202 electrical engineering electronic engineering information engineering Optoelectronics Thin film solar cell 0210 nano-technology business Spectroscopy Diode |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). |
| Popis: | This paper deals with the determination of the height of the back contact diode in CIGS thin film solar cells. Two different methods are explained, namely admittance spectroscopy andV OC (T). Based on the comparison of simulations and experimental data for cells from different manufacturing processes, it could be shown that both methods are suitable for the determination of the back contact diode. Thereby, the cells from the sequential process generally show a better match compared to the coevaporated ones. Furthermore, the impact of a modified back contact was investigated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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