Autor:	C. Delseny, S. Jarrix, H. Wang, F. Pascal, C. Dubon-Chevallier, J. Dangla, G. Lecoy
Rok vydání:	1993
Předmět:	Materials science business.industry Infrasound Bipolar junction transistor Optoelectronics Spectral density Flicker noise Heterojunction business Noise (radio) Spectral line
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.44552
Popis:	Low‐frequency noise measurements on GaAlAs/GaAs Heterojunction Bipolar Transistors are reported Noise spectra exhibit excess noise composed of 1/f noise and several generation‐recombination (g‐r) levels. To try to localize and identify noise sources, results from various measurement modes and at different working temperatures are investigated.
Databáze:	OpenAIRE
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