Charge transfer and Fermi level shift inp-doped single-walled carbon nanotubes
| Autor: | Katalin Kamarás, Wei Zhou, John E. Fischer, Juraj Vavro, Norbert M. Nemes, David B. Tanner, Ferenc Borondics |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Condensed matter physics Doping Fermi level Resonance Charge (physics) Electronic structure Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake Electrical resistivity and conductivity Condensed Matter::Superconductivity Seebeck coefficient symbols Condensed Matter::Strongly Correlated Electrons Raman spectroscopy |
| Zdroj: | Physical Review B. 71 |
| ISSN: | 1550-235X 1098-0121 |
| Popis: | The electronic properties of $p$-doped single-walled carbon nanotube (SWNT) bulk samples were studied by temperature-dependent resistivity and thermopower, optical reflectivity, and Raman spectroscopy. These all give consistent results for the Fermi level downshift $(\ensuremath{\Delta}{E}_{F})$ induced by doping. We find $\ensuremath{\Delta}{E}_{F}\ensuremath{\approx}0.35\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ and $0.50\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ for concentrated nitric and sulfuric acid doping respectively. With these values, the evolution of Raman spectra can be explained by variations in the resonance condition as ${E}_{F}$ moves down into the valence band. Furthermore, we find no evidence for diameter-selective doping, nor any distinction between doping responses of metallic and semiconducting tubes. |
| Databáze: | OpenAIRE |
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