Structural and some other properties of silicon deposited in an SiCl4H2 r.f. discharge
| Autor: | M. Schärli, H. Stüssi, J. Brunner, Francesco Cramarossa, S. Vepřek, M. Braun, H.R. Oswald, Z. Iqbal, Giovanni Bruno, P. Capezzuto |
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| Rok vydání: | 1982 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Ultra-high vacuum technology industry and agriculture Metals and Alloys Nanocrystalline silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces engineering.material Surfaces Coatings and Films Electronic Optical and Magnetic Materials symbols.namesake Polycrystalline silicon X-ray photoelectron spectroscopy chemistry Materials Chemistry symbols engineering Crystallite Raman scattering |
| Zdroj: | Thin Solid Films. 87:43-51 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(82)90569-7 |
| Popis: | X-ray and Raman scattering data show that thin films of silicon deposited in an SiCl4H2 discharge at temperatures between about 200 and 430°C are polycrystalline. The correlation between the peak frequency of the Raman line and the crystallite size agrees well with that reported recently for polycrystalline silicon. After annealing under high vacuum, hydrogen evolution is observed above about 450°C, but optical absorption shows no changes even after annealing at approximately 700–800°C. A chlorine content of several per cent was determined by X-ray photoelectron spectroscopy and Rutherford backscattering. The hydrogen concentration was calculated from IR absorption and thermal desorption. |
| Databáze: | OpenAIRE |
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