Atmospheric pressure organometallic vapor phase epitaxy growth of high‐mobility GaAs using trimethylgallium and arsine

Autor:	A. Majerfeld, Zheng-Hong Lu, E. G. Oh, E. Mao, M. C. Hanna
Rok vydání:	1990
Předmět:	chemistry.chemical_compound Electron mobility Arsine Photoluminescence Physics and Astronomy (miscellaneous) chemistry Atmospheric pressure Inorganic chemistry Analytical chemistry Partial pressure Trimethylgallium Epitaxy Group 2 organometallic chemistry
Zdroj:	Applied Physics Letters. 57:1120-1122
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.103509
Popis:	Epitaxial layers of GaAs with peak mobilities as high as 200 000 cm2/V s at 50 K have been grown in an atmospheric pressure organometallic vapor phase epitaxy reactor using trimethylgallium (TMG) and arsine. The growth conditions which lead to high‐mobility GaAs are described in this letter. Low‐temperature photoluminescence and temperature‐dependent Hall measurements are used to study the dependence of the incorporation of residual impurities on the growth temperature and arsine partial pressure. Carbon acceptor densities
Databáze:	OpenAIRE
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