Optical, luminescence and scintillation characteristics of non - stoichiometric LuAG:Ce ceramics
| Autor: | Vladimir Babin, Alena Beitlerova, Yihua Huang, Yubai Pan, Martin Nikl, Xiqi Feng, Yanping Zeng, Yun Shi, Shuping Liu, Jiri Mares, Carmelo D'Ambrosio |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Biophysics Analytical chemistry 02 engineering and technology 01 natural sciences Biochemistry Optics 0103 physical sciences Ceramic Absorption (electromagnetic radiation) 010302 applied physics Scintillation business.industry General Chemistry Radioluminescence 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Afterglow visual_art Yield (chemistry) visual_art.visual_art_medium 0210 nano-technology Luminescence business Single crystal |
| Zdroj: | Journal of Luminescence. 169:72-77 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/j.jlumin.2015.08.034 |
| Popis: | Non-stoichiometric Lu 3+ x Al 5 O 12 :Ce (Lu 3+ x AG:Ce, x =1, 2, 3 and 4 %) ceramics were fabricated by solid state reaction method and further optimized by an air-annealing process. Absorption, luminescence spectra and scintillation characteristics such as light yield, scintillation decay times, energy resolution, proportionality and afterglow were measured and compared with those of the latest LuAG:Ce single crystal and stoichiometric LuAG:Ce,Mg ceramic samples. Thanks to the elimination of oxygen vacancies produced in the vacuum sintering process, air-annealing treatment led to a significant decrease of afterglow and a remarkable enhancement of radioluminescence intensity and light yield. The highest light yield was found in annealed 1% Lu 3+ rich Lu 3+1% AG:Ce ceramic, reaching 14,760 ph/MeV (1 μs shaping time) and 22,400 ph/MeV (10 μs shaping time). Scintillation decays of Lu 3+ x AG:Ce ceramics consist of both fast (decay time 65–73 ns) and slow (decay time 740–1116 ns) decay components where the relative intensity of the latter is higher (~58%). A decreasing trend in scintillation efficiency was observed with increasing excess of Lu (with higher x values) in the samples. This can be explained by the existence of various electron traps due to Lu Al antisite defect and structure disorder at the gain boundaries and interfaces. |
| Databáze: | OpenAIRE |
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