| Autor: |
Ji-Liang Chen, Y. R. Lan, C. C. Wei, D. S. Wuu, Shu Ping Liu, Ray-Hua Horng, Zhe Chuan Feng, Yu Chuan Fu, Yuh-Renn Wu |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
Nanostructured Thin Films IV. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.893087 |
| Popis: |
Al-doped ZnO can replace tin-doped indium oxide (ITO) as a good transparent conductive oxide (TCO) in LEDs and optoelectronic applications. We investigate on nanometer scale AlZnO thin film materials epitaxied on sapphire substrates in 350-650°C from pulsed laser deposition (PLD). Synchrotron radiation X-ray absorption fine-structure spectroscopy on O K-edge indicates that Al-doped ZnO can not form alloy at growth temperature 350°C without Al-O bonding feature. The Al-O transition of AZO550 is stronger than AZO650. These are correlated to Raman scattering measurements and analyses. Al-doped ZnO grown at 350°C possesses weak/broad Raman signals indicating a poor crystalline film. The E2 (high) mode is strong and narrow in AZO550. All these experimental results indicate that PLD grown AlZnO film on sapphire could get a better crystalline quality at 550°C than 350°C and 650°C. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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