Climate Model for Potential-Induced Degradation of Crystalline Silicon Photovoltaic Modules
| Autor: | Raykov, A., Nagel, H., Amankwah, D.-J., Bergholz, W. |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: | |
| DOI: | 10.4229/27theupvsec2012-4bv.2.50 |
| Popis: | 27th European Photovoltaic Solar Energy Conference and Exhibition; 3399-3404 A climate model for the evaluation of the lifetime of crystalline Si PV modules with respect to potentialinduced degradation (PID) is proposed. It is based on the calculation of the maximum electrical power Pmpp versus time of one-cell modules. Input parameters are the measured impact of temperature, relative humidity, encapsulation material and PID-stability of the cell on the PID of the one-cell modules. It was found that PID follows an Arrhenius-like behavior with activation energy of 75 eV. The PID rate as a function of the relative humidity experiences a threshold value after which the rate saturates. The PID-stabilized cells showed a degradation time that is 385 times longer than laboratory-type PID-prone cells. Another important process in the PID context, the regeneration, was studied for a variety of temperatures. It showed power dependence on the shunt resistance value and a linear relation with time. Finally, the estimated lifetime of a 60-cell module generated by the PID climate model yields a good agreement with the experimental data for both standard accelerated testing conditions and a basic climate profile. |
| Databáze: | OpenAIRE |
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