Type II–type I conversion of GaAs/GaAsSb heterostructure energy spectrum under optical pumping
| Autor: | D. M. Gaponova, N. Samal, S. V. Morozov, V. I. Gavrilenko, D. I. Kryzhkov, D. I. Kuritsin, Z. F. Krasilnik, A. V. Antonov, Yu. G. Sadofyev, A. N. Yablonsky |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Photoluminescence Condensed Matter::Other business.industry Physics::Optics General Physics and Astronomy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Molecular physics Blueshift Optical pumping Condensed Matter::Materials Science Band bending Optoelectronics Charge carrier Photoluminescence excitation business Quantum well |
| Zdroj: | Journal of Applied Physics. 113:163107 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.4802500 |
| Popis: | We present the experimental results of time-resolved photoluminescence spectroscopy in type II GaAs/GaAs0.64Sb0.36 quantum well heterostructures. At moderate optical excitation densities (below 103 W/cm2), we observe blue shift of the photoluminescence peak with increasing pump power which results from band bending at the type II heterointerface due to photo-excited charge carriers. With further increase in the excitation density, the observed peak undergoes red shift accompanied by significant drop in the luminescence decay time (from 10 ns to 1 ns) which is caused by extreme band bending and increasing contribution of type I radiative transitions to the photoluminescence signal. |
| Databáze: | OpenAIRE |
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