Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
| Autor: | S. L. Hsu, Tzer-En Nee, C. C. Huang, C. Y. Lai, Jen-Inn Chyi, Nien Tze Yeh, Tzu-Min Hsu, Wen-Hao Chang |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Photocurrent
Materials science Photoluminescence Condensed matter physics Condensed Matter::Other business.industry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science symbols.namesake Stark effect Quantum dot symbols Intermediate state Optoelectronics Redistribution (chemistry) business Quantum tunnelling Wetting layer |
| Zdroj: | Physical Review B. 62:6959-6962 |
| ISSN: | 1095-3795 0163-1829 |
| Popis: | We present a temperature- and bias-dependent photocurrent study of the excitonic interband transitions of InAs self-assembled quantum dots (QD's). It was found that the carrier escape process from QD's is dominated by hole escape processes. The main path for this hole escape process was found to be thermal-assisted hole tunneling, from the dot level to the GaAs barrier via the wetting layer as an intermediate state. Energy-dependent carrier tunneling from the QD's to the barrier was observed at low temperatures. Energy shifts due to the size-selective tunneling effect and the quantum-confined Stark effect are discussed and compared with the carrier redistribution effect in photoluminescence measurements. |
| Databáze: | OpenAIRE |
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